The course aims to illustrate the most advanced methods for the study, simulation and analysis of solid-state electronic and optoelectronic devices. The physical mechanisms underlying the operation of the most modern devices based on large gap semiconductors, such as GaN, GaAs and AlGaAs, as well as the more traditional ones manufactured in Silicon, will be illustrated. Moreover, through appropriate scale laws, the limits glimpsed for current technologies will be analyzed with the indication of possible solutions
Curriculum
teacher profile teaching materials
Charge transport mechanisms in dielectric and semiconductor materials. Point defects and electronic states. Frenkel-Poole and Poole effect. Child-Langmuir law. Space charge limited current (SCLC regime). Fowler-Nordheim current. Impedance Spectroscopy. Applications: characterization of thin oxides; polycrystalline materials; silicon nanowires.
Unipolar devices: JFET e MESFET. Channel resistance. iDS VGS trans-characteristic. iDS VDS. Transconductance, gm. Channel conductance, gd. The JFET used as a signal amplifier. MESFET static and dynamic response. Gradual channel model. Small signal model. Series resistance effects. Deviations from ideality. Field dependent charge mobility.
Metal-Oxide-Semiconductor structures. MIS diode. Overall capacitance. Thermal equilibrium analysis. Interface states. Charge inside the oxide. MOS electronics. Frequency dependent diode’s capacitance. Depletion and enrichment mode MOSFET. Threshold voltage. Characteristic parameters. Charge control model. Channel modulation. Floating gate MOSFET. FAMOS. CMOS. Latch-up. Geometrical effects of miniaturization: Sub-threshold currents. Hot carriers. Scale law. Pspice model.
Transparencies projected during the course
Bibliographic references proposed for further study
Fruizione: 20810064 ELETTRONICA DEI DISPOSITIVI A STATO SOLIDO in Ingegneria elettronica per l'industria e l'innovazione LM-29 CONTE GENNARO
Programme
Metal-Semiconductor junction. The Schottky diode. Work function and electronic affinity. Ideal I-V curve. Ohmic contact. Surface charge and Debye length. Transport inside the SCR. Thermionic current. Drift-diffusion components. Schottky effect. Charge carriers in the SCR: evaluation of Nd and Vbi. Uniform doping. Metal-n+-n eteroface.Charge transport mechanisms in dielectric and semiconductor materials. Point defects and electronic states. Frenkel-Poole and Poole effect. Child-Langmuir law. Space charge limited current (SCLC regime). Fowler-Nordheim current. Impedance Spectroscopy. Applications: characterization of thin oxides; polycrystalline materials; silicon nanowires.
Unipolar devices: JFET e MESFET. Channel resistance. iDS VGS trans-characteristic. iDS VDS. Transconductance, gm. Channel conductance, gd. The JFET used as a signal amplifier. MESFET static and dynamic response. Gradual channel model. Small signal model. Series resistance effects. Deviations from ideality. Field dependent charge mobility.
Metal-Oxide-Semiconductor structures. MIS diode. Overall capacitance. Thermal equilibrium analysis. Interface states. Charge inside the oxide. MOS electronics. Frequency dependent diode’s capacitance. Depletion and enrichment mode MOSFET. Threshold voltage. Characteristic parameters. Charge control model. Channel modulation. Floating gate MOSFET. FAMOS. CMOS. Latch-up. Geometrical effects of miniaturization: Sub-threshold currents. Hot carriers. Scale law. Pspice model.
Core Documentation
S. M. Sze, K. K. Ng - Physics of Semiconductor Devices, 3rd ed., WileyTransparencies projected during the course
Bibliographic references proposed for further study
Type of delivery of the course
The lessons take place through the screening of Microsoft PPT slides with all the topics developed during the course. This material is a valuable aid for understanding the topics, studying and preparing for the exam.Type of evaluation
The exam aims to evaluate the candidate's preparation on the program carried out with simple exercises. teacher profile teaching materials
Charge transport mechanisms in dielectric and semiconductor materials. Point defects and electronic states. Frenkel-Poole and Poole effect. Child-Langmuir law. Space charge limited current (SCLC regime). Fowler-Nordheim current. Impedance Spectroscopy. Applications: characterization of thin oxides; polycrystalline materials; silicon nanowires.
Unipolar devices: JFET e MESFET. Channel resistance. iDS VGS trans-characteristic. iDS VDS. Transconductance, gm. Channel conductance, gd. The JFET used as a signal amplifier. MESFET static and dynamic response. Gradual channel model. Small signal model. Series resistance effects. Deviations from ideality. Field dependent charge mobility.
Metal-Oxide-Semiconductor structures. MIS diode. Overall capacitance. Thermal equilibrium analysis. Interface states. Charge inside the oxide. MOS electronics. Frequency dependent diode’s capacitance. Depletion and enrichment mode MOSFET. Threshold voltage. Characteristic parameters. Charge control model. Channel modulation. Floating gate MOSFET. FAMOS. CMOS. Latch-up. Geometrical effects of miniaturization: Sub-threshold currents. Hot carriers. Scale law. Pspice model.
Transparencies projected during the course
Bibliographic references proposed for further study
Fruizione: 20810064 ELETTRONICA DEI DISPOSITIVI A STATO SOLIDO in Ingegneria elettronica per l'industria e l'innovazione LM-29 CONTE GENNARO
Programme
Metal-Semiconductor junction. The Schottky diode. Work function and electronic affinity. Ideal I-V curve. Ohmic contact. Surface charge and Debye length. Transport inside the SCR. Thermionic current. Drift-diffusion components. Schottky effect. Charge carriers in the SCR: evaluation of Nd and Vbi. Uniform doping. Metal-n+-n eteroface.Charge transport mechanisms in dielectric and semiconductor materials. Point defects and electronic states. Frenkel-Poole and Poole effect. Child-Langmuir law. Space charge limited current (SCLC regime). Fowler-Nordheim current. Impedance Spectroscopy. Applications: characterization of thin oxides; polycrystalline materials; silicon nanowires.
Unipolar devices: JFET e MESFET. Channel resistance. iDS VGS trans-characteristic. iDS VDS. Transconductance, gm. Channel conductance, gd. The JFET used as a signal amplifier. MESFET static and dynamic response. Gradual channel model. Small signal model. Series resistance effects. Deviations from ideality. Field dependent charge mobility.
Metal-Oxide-Semiconductor structures. MIS diode. Overall capacitance. Thermal equilibrium analysis. Interface states. Charge inside the oxide. MOS electronics. Frequency dependent diode’s capacitance. Depletion and enrichment mode MOSFET. Threshold voltage. Characteristic parameters. Charge control model. Channel modulation. Floating gate MOSFET. FAMOS. CMOS. Latch-up. Geometrical effects of miniaturization: Sub-threshold currents. Hot carriers. Scale law. Pspice model.
Core Documentation
S. M. Sze, K. K. Ng - Physics of Semiconductor Devices, 3rd ed., WileyTransparencies projected during the course
Bibliographic references proposed for further study
Type of delivery of the course
The lessons take place through the screening of Microsoft PPT slides with all the topics developed during the course. This material is a valuable aid for understanding the topics, studying and preparing for the exam.Type of evaluation
The exam aims to evaluate the candidate's preparation on the program carried out with simple exercises. teacher profile teaching materials
Charge transport mechanisms in dielectric and semiconductor materials. Point defects and electronic states. Frenkel-Poole and Poole effect. Child-Langmuir law. Space charge limited current (SCLC regime). Fowler-Nordheim current. Impedance Spectroscopy. Applications: characterization of thin oxides; polycrystalline materials; silicon nanowires.
Unipolar devices: JFET e MESFET. Channel resistance. iDS VGS trans-characteristic. iDS VDS. Transconductance, gm. Channel conductance, gd. The JFET used as a signal amplifier. MESFET static and dynamic response. Gradual channel model. Small signal model. Series resistance effects. Deviations from ideality. Field dependent charge mobility.
Metal-Oxide-Semiconductor structures. MIS diode. Overall capacitance. Thermal equilibrium analysis. Interface states. Charge inside the oxide. MOS electronics. Frequency dependent diode’s capacitance. Depletion and enrichment mode MOSFET. Threshold voltage. Characteristic parameters. Charge control model. Channel modulation. Floating gate MOSFET. FAMOS. CMOS. Latch-up. Geometrical effects of miniaturization: Sub-threshold currents. Hot carriers. Scale law. Pspice model.
Transparencies projected during the course
Bibliographic references proposed for further study
Fruizione: 20810064 ELETTRONICA DEI DISPOSITIVI A STATO SOLIDO in Ingegneria elettronica per l'industria e l'innovazione LM-29 CONTE GENNARO
Programme
Metal-Semiconductor junction. The Schottky diode. Work function and electronic affinity. Ideal I-V curve. Ohmic contact. Surface charge and Debye length. Transport inside the SCR. Thermionic current. Drift-diffusion components. Schottky effect. Charge carriers in the SCR: evaluation of Nd and Vbi. Uniform doping. Metal-n+-n eteroface.Charge transport mechanisms in dielectric and semiconductor materials. Point defects and electronic states. Frenkel-Poole and Poole effect. Child-Langmuir law. Space charge limited current (SCLC regime). Fowler-Nordheim current. Impedance Spectroscopy. Applications: characterization of thin oxides; polycrystalline materials; silicon nanowires.
Unipolar devices: JFET e MESFET. Channel resistance. iDS VGS trans-characteristic. iDS VDS. Transconductance, gm. Channel conductance, gd. The JFET used as a signal amplifier. MESFET static and dynamic response. Gradual channel model. Small signal model. Series resistance effects. Deviations from ideality. Field dependent charge mobility.
Metal-Oxide-Semiconductor structures. MIS diode. Overall capacitance. Thermal equilibrium analysis. Interface states. Charge inside the oxide. MOS electronics. Frequency dependent diode’s capacitance. Depletion and enrichment mode MOSFET. Threshold voltage. Characteristic parameters. Charge control model. Channel modulation. Floating gate MOSFET. FAMOS. CMOS. Latch-up. Geometrical effects of miniaturization: Sub-threshold currents. Hot carriers. Scale law. Pspice model.
Core Documentation
S. M. Sze, K. K. Ng - Physics of Semiconductor Devices, 3rd ed., WileyTransparencies projected during the course
Bibliographic references proposed for further study
Type of delivery of the course
The lessons take place through the screening of Microsoft PPT slides with all the topics developed during the course. This material is a valuable aid for understanding the topics, studying and preparing for the exam.Type of evaluation
The exam aims to evaluate the candidate's preparation on the program carried out with simple exercises. teacher profile teaching materials
Charge transport mechanisms in dielectric and semiconductor materials. Point defects and electronic states. Frenkel-Poole and Poole effect. Child-Langmuir law. Space charge limited current (SCLC regime). Fowler-Nordheim current. Impedance Spectroscopy. Applications: characterization of thin oxides; polycrystalline materials; silicon nanowires.
Unipolar devices: JFET e MESFET. Channel resistance. iDS VGS trans-characteristic. iDS VDS. Transconductance, gm. Channel conductance, gd. The JFET used as a signal amplifier. MESFET static and dynamic response. Gradual channel model. Small signal model. Series resistance effects. Deviations from ideality. Field dependent charge mobility.
Metal-Oxide-Semiconductor structures. MIS diode. Overall capacitance. Thermal equilibrium analysis. Interface states. Charge inside the oxide. MOS electronics. Frequency dependent diode’s capacitance. Depletion and enrichment mode MOSFET. Threshold voltage. Characteristic parameters. Charge control model. Channel modulation. Floating gate MOSFET. FAMOS. CMOS. Latch-up. Geometrical effects of miniaturization: Sub-threshold currents. Hot carriers. Scale law. Pspice model.
Transparencies projected during the course
Bibliographic references proposed for further study
Fruizione: 20810064 ELETTRONICA DEI DISPOSITIVI A STATO SOLIDO in Ingegneria elettronica per l'industria e l'innovazione LM-29 CONTE GENNARO
Programme
Metal-Semiconductor junction. The Schottky diode. Work function and electronic affinity. Ideal I-V curve. Ohmic contact. Surface charge and Debye length. Transport inside the SCR. Thermionic current. Drift-diffusion components. Schottky effect. Charge carriers in the SCR: evaluation of Nd and Vbi. Uniform doping. Metal-n+-n eteroface.Charge transport mechanisms in dielectric and semiconductor materials. Point defects and electronic states. Frenkel-Poole and Poole effect. Child-Langmuir law. Space charge limited current (SCLC regime). Fowler-Nordheim current. Impedance Spectroscopy. Applications: characterization of thin oxides; polycrystalline materials; silicon nanowires.
Unipolar devices: JFET e MESFET. Channel resistance. iDS VGS trans-characteristic. iDS VDS. Transconductance, gm. Channel conductance, gd. The JFET used as a signal amplifier. MESFET static and dynamic response. Gradual channel model. Small signal model. Series resistance effects. Deviations from ideality. Field dependent charge mobility.
Metal-Oxide-Semiconductor structures. MIS diode. Overall capacitance. Thermal equilibrium analysis. Interface states. Charge inside the oxide. MOS electronics. Frequency dependent diode’s capacitance. Depletion and enrichment mode MOSFET. Threshold voltage. Characteristic parameters. Charge control model. Channel modulation. Floating gate MOSFET. FAMOS. CMOS. Latch-up. Geometrical effects of miniaturization: Sub-threshold currents. Hot carriers. Scale law. Pspice model.
Core Documentation
S. M. Sze, K. K. Ng - Physics of Semiconductor Devices, 3rd ed., WileyTransparencies projected during the course
Bibliographic references proposed for further study
Type of delivery of the course
The lessons take place through the screening of Microsoft PPT slides with all the topics developed during the course. This material is a valuable aid for understanding the topics, studying and preparing for the exam.Type of evaluation
The exam aims to evaluate the candidate's preparation on the program carried out with simple exercises. teacher profile teaching materials
Charge transport mechanisms in dielectric and semiconductor materials. Point defects and electronic states. Frenkel-Poole and Poole effect. Child-Langmuir law. Space charge limited current (SCLC regime). Fowler-Nordheim current. Impedance Spectroscopy. Applications: characterization of thin oxides; polycrystalline materials; silicon nanowires.
Unipolar devices: JFET e MESFET. Channel resistance. iDS VGS trans-characteristic. iDS VDS. Transconductance, gm. Channel conductance, gd. The JFET used as a signal amplifier. MESFET static and dynamic response. Gradual channel model. Small signal model. Series resistance effects. Deviations from ideality. Field dependent charge mobility.
Metal-Oxide-Semiconductor structures. MIS diode. Overall capacitance. Thermal equilibrium analysis. Interface states. Charge inside the oxide. MOS electronics. Frequency dependent diode’s capacitance. Depletion and enrichment mode MOSFET. Threshold voltage. Characteristic parameters. Charge control model. Channel modulation. Floating gate MOSFET. FAMOS. CMOS. Latch-up. Geometrical effects of miniaturization: Sub-threshold currents. Hot carriers. Scale law. Pspice model.
Transparencies projected during the course
Bibliographic references proposed for further study
Fruizione: 20810064 ELETTRONICA DEI DISPOSITIVI A STATO SOLIDO in Ingegneria elettronica per l'industria e l'innovazione LM-29 CONTE GENNARO
Programme
Metal-Semiconductor junction. The Schottky diode. Work function and electronic affinity. Ideal I-V curve. Ohmic contact. Surface charge and Debye length. Transport inside the SCR. Thermionic current. Drift-diffusion components. Schottky effect. Charge carriers in the SCR: evaluation of Nd and Vbi. Uniform doping. Metal-n+-n eteroface.Charge transport mechanisms in dielectric and semiconductor materials. Point defects and electronic states. Frenkel-Poole and Poole effect. Child-Langmuir law. Space charge limited current (SCLC regime). Fowler-Nordheim current. Impedance Spectroscopy. Applications: characterization of thin oxides; polycrystalline materials; silicon nanowires.
Unipolar devices: JFET e MESFET. Channel resistance. iDS VGS trans-characteristic. iDS VDS. Transconductance, gm. Channel conductance, gd. The JFET used as a signal amplifier. MESFET static and dynamic response. Gradual channel model. Small signal model. Series resistance effects. Deviations from ideality. Field dependent charge mobility.
Metal-Oxide-Semiconductor structures. MIS diode. Overall capacitance. Thermal equilibrium analysis. Interface states. Charge inside the oxide. MOS electronics. Frequency dependent diode’s capacitance. Depletion and enrichment mode MOSFET. Threshold voltage. Characteristic parameters. Charge control model. Channel modulation. Floating gate MOSFET. FAMOS. CMOS. Latch-up. Geometrical effects of miniaturization: Sub-threshold currents. Hot carriers. Scale law. Pspice model.
Core Documentation
S. M. Sze, K. K. Ng - Physics of Semiconductor Devices, 3rd ed., WileyTransparencies projected during the course
Bibliographic references proposed for further study
Type of delivery of the course
The lessons take place through the screening of Microsoft PPT slides with all the topics developed during the course. This material is a valuable aid for understanding the topics, studying and preparing for the exam.Type of evaluation
The exam aims to evaluate the candidate's preparation on the program carried out with simple exercises.